Chemical vapour deposition of In2O3 thin films from a tris-guanidinate indium precursor
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Published on: May 7, 2019
Seán T Barry1, Peter G Gordon, Matthew J Ward
1Department of Chemistry, Carleton University, Ottawa, Canada K1S 5B6. sean_barry@carleton.ca
Abstract:
A new homoleptic sublimable indium(III) guanidinate, (In[(N(i)Pr)(2)CNMe(2)](3) (1), was synthesized from a facile high-yield procedure. Compound 1 crystallized is a P1 space group; a = 10.5989(14) Å, b = 11.0030(15) Å, c = 16.273(2) Å, α = 91.190(2)°, β = 96.561(2)°, γ = 115.555(2)°; R = 3.50%. Thermogravimetric analysis showed 1 to produce elemental indium as a residual mass. Thermolysis in a sealed NMR tube showed carbodiimide and protonated dimethyl amine by (1)H NMR. Chemical vapour deposition experiments above 275 °C with air as the reactant gas showed 1 to readily deposit cubic indium oxide with good transparency.
