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Related Experiment Video

Updated: May 30, 2026

Laser-induced Forward Transfer for Flip-chip Packaging of Single Dies

Laser-induced Forward Transfer for Flip-chip Packaging of Single Dies

Published on: March 20, 2015

InP-based deep-ridge NPN transistor laser.

S Liang¹, D H Kong, H L Zhu

¹Key Laboratory of Semiconductor Materials, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China. liangsong@semi.ac.cn

|August 18, 2011

Summary

This summary is machine-generated.

We developed a new Indium Phosphide (InP) transistor laser (TL) with a deep-ridge structure. This design improves performance by reducing optical absorption and quantum well damage, enabling continuous wave operation at -40 °C.

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Area of Science:

Optoelectronics
Semiconductor Devices
Materials Science

Background:

Indium Phosphide (InP) based transistor lasers (TLs) are crucial optoelectronic components.
Previous designs faced challenges with optical absorption and quantum well (QW) degradation due to zinc (Zn) diffusion in heavily doped base layers.

Purpose of the Study:

To report the development of a novel deep-ridge InP-based NPN transistor laser (TL).
To investigate the impact of QW placement relative to the base layer on device performance.
To achieve improved continuous wave (CW) operation characteristics.

Main Methods:

Fabrication of an InP-based deep-ridge NPN transistor laser (TL) with a specific structure.
Strategic placement of the quantum well (QW) active material above the heavily Zn-doped base layer.
Characterization of the TL's optical and operational performance, including CW operation temperature.

Main Results:

The deep-ridge TL design significantly reduced optical absorption in the base material.
Zn diffusion into the QWs was minimized, preserving QW quality.
Continuous wave (CW) operation was achieved at -40 °C, outperforming shallow-ridge TLs.

Conclusions:

The deep-ridge structure is a promising approach for enhancing InP-based NPN TL performance.
Optimizing the growth procedure is expected to yield further significant improvements.
This work advances the development of high-performance optoelectronic devices.