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Related Experiment Video

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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

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Device and SPICE modeling of RRAM devices.

Patrick Sheridan¹, Kuk-Hwan Kim, Siddharth Gaba

¹Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109, USA.

|August 18, 2011

Summary

Researchers developed physics-based models for resistive random-access memory (RRAM) devices. These models accurately simulate RRAM

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Area of Science:

Materials Science
Electrical Engineering
Computational Physics

Background:

Resistive random-access memory (RRAM) devices exhibit complex dynamic resistive switching phenomena.
Accurate modeling is crucial for RRAM circuit design and simulation.

Purpose of the Study:

To develop physics-based models for RRAM devices.
To enable integration of RRAM models into standard circuit simulators like SPICE.
To accurately capture dynamic switching effects in RRAM.

Main Methods:

Utilized a generalized memristive system framework for device modeling.
Constructed a subcircuit for incorporating device models into SPICE.
Validated SPICE models against observed RRAM dynamic effects.

Main Results:

Developed physics-based RRAM device models.
Successfully integrated models into SPICE simulations.
SPICE models accurately predicted threshold effects, voltage-dependent switching times, and multi-level behavior.
Models demonstrated expandability for internal state changes.

Conclusions:

The developed physics-based and SPICE models provide accurate simulation of RRAM dynamic switching.
These models are valuable tools for the design and simulation of RRAM-based memory and logic circuits.
The framework allows for future expansion to include more complex internal device dynamics.