Device and SPICE modeling of RRAM devices

Area of Science:

• Materials Science
• Electrical Engineering
• Computational Physics

Background:

• Resistive random-access memory (RRAM) devices exhibit complex dynamic resistive switching phenomena.
• Accurate modeling is crucial for RRAM circuit design and simulation.

Purpose of the Study:

• To develop physics-based models for RRAM devices.
• To enable integration of RRAM models into standard circuit simulators like SPICE.
• To accurately capture dynamic switching effects in RRAM.

Main Methods:

• Utilized a generalized memristive system framework for device modeling.
• Constructed a subcircuit for incorporating device models into SPICE.
• Validated SPICE models against observed RRAM dynamic effects.

Main Results:

• Developed physics-based RRAM device models.
• Successfully integrated models into SPICE simulations.
• SPICE models accurately predicted threshold effects, voltage-dependent switching times, and multi-level behavior.
• Models demonstrated expandability for internal state changes.

Conclusions:

• The developed physics-based and SPICE models provide accurate simulation of RRAM dynamic switching.
• These models are valuable tools for the design and simulation of RRAM-based memory and logic circuits.
• The framework allows for future expansion to include more complex internal device dynamics.