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Related Concept Videos

Determination of Crystal Structures01:29

Determination of Crystal Structures

In the late 1800s, the revelation that light extended beyond visible wavelengths led to the discovery of X-rays by Wilhelm Roentgen. Recognized as high-energy electromagnetic radiation with short wavelengths, X-rays prompted exploration into their interaction with crystals. Max von Laue proposed in 1912 that the periodic arrangement of atoms, ions, or molecules in crystals would cause them to diffract X-rays, a hypothesis confirmed through experiments with copper sulfate and zinc sulfide...
X-ray Crystallography02:18

X-ray Crystallography

The size of the unit cell and the arrangement of atoms in a crystal may be determined from measurements of the diffraction of X-rays by the crystal, termed X-ray crystallography.
Diffraction
Diffraction is the change in the direction of travel experienced by an electromagnetic wave when it encounters a physical barrier whose dimensions are comparable to those of the wavelength of the light. X-rays are electromagnetic radiation with wavelengths about as long as the distance between neighboring...
X-ray Diffraction of Biological Samples01:10

X-ray Diffraction of Biological Samples

X-ray diffraction or XRD is an analytical tool that utilizes X-rays to study ordered structures such as crystalline organic and inorganic samples, polycrystalline materials, proteins, carbohydrates, and drugs.
According to Bragg's law, when X-rays strike the sample positioned on a stage, the rays are  scattered by the electron clouds around the sample atoms. The  X-ray diffraction or scattering is caused by constructive interference of the X-ray waves that reflect off the internal crystal...
Imperfections in Crystal Structure: Stoichiometric Point Defects01:26

Imperfections in Crystal Structure: Stoichiometric Point Defects

Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...
Imperfections in Crystal Structure: Point, Line and Plane Defects01:25

Imperfections in Crystal Structure: Point, Line and Plane Defects

A perfect crystal, in theory, has a uniform structure with the same unit cell and lattice points throughout. However, any deviation from this periodic arrangement is known as an imperfection or defect. These defects can be categorized into three types: point, line, and plane defects.Point defects occur when there is a deviation from the ideal due to missing atoms, displaced atoms, or additional atoms. These imperfections might occur due to imperfect packing during crystallization or because of...
Imperfections in Crystal Structure: Non-Stoichiometric Defects01:29

Imperfections in Crystal Structure: Non-Stoichiometric Defects

Non-stoichiometric defects refer to a type of defect in the crystal structure of a compound where the ratio of its constituent elements deviates from the ideal stoichiometric ratio. There are two main types of non-stoichiometric defects: metal excess defects and metal deficiency defects.Metal excess defects occur when there is a slight surplus of metal ions than what is required by the stoichiometric ratio of the compound. For example, heating a sodium chloride crystal in sodium vapor results...

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Related Experiment Video

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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

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Published on: May 28, 2016

[Boundary threshold value method used in crystalline material internal defect detection by short wavelength X-ray

Jian-Lei Mu1, Jin Zhang, Zheng-Huan Gao

  • 1Beijing Key Laboratory for Corrosion, Erosion and Surface Technology, University of Science and Technology Beijing, Beijing 100083, China. mujianlei725@126.com

Guang Pu Xue Yu Guang Pu Fen Xi = Guang Pu
|August 19, 2011
PubMed
Summary

This study introduces a thresholding method for X-ray diffraction tomography using a short wavelength X-ray diffractometer (SWXRD) to clearly detect crystalline material defects. The method effectively determines defect boundaries, enhancing imaging quality for internal defect analysis.

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Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis
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Measurements of Long-range Electronic Correlations During Femtosecond Diffraction Experiments Performed on Nanocrystals of Buckminsterfullerene
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Measurements of Long-range Electronic Correlations During Femtosecond Diffraction Experiments Performed on Nanocrystals of Buckminsterfullerene

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Last Updated: May 30, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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Measurements of Long-range Electronic Correlations During Femtosecond Diffraction Experiments Performed on Nanocrystals of Buckminsterfullerene

Published on: August 22, 2017

Area of Science:

  • Materials Science
  • Crystallography
  • Non-destructive Testing

Context:

  • X-ray diffraction tomography (XRD) is crucial for analyzing crystalline material internal defects.
  • Existing methods often rely on expensive synchrotron radiation or neutron sources.
  • Common X-ray sources, like the short wavelength X-ray diffractometer (SWXRD), offer a more accessible alternative but face challenges in defect boundary determination.

Purpose:

  • To develop and validate a novel thresholding method for processing diffracted intensity data in SWXRD tomography.
  • To improve the clarity and accuracy of internal defect boundary detection in crystalline materials.
  • To investigate the influence of various factors on the optimal threshold value.

Summary:

  • A threshold value method based on diffracted intensity is proposed for X-ray diffraction tomography using SWXRD.
  • Gaussian fitting was employed to analyze factors influencing the threshold value, specifically using image quality indicators in powdered aluminum.
  • The study determined that 91% of the substrate's diffraction intensity serves as an effective threshold, validated by experiments on aluminum alloy sheets with slit defects.

Impact:

  • Enables clearer visualization and more reliable detection of internal defects in crystalline materials using accessible SWXRD technology.
  • Provides a practical and validated method for determining defect boundaries, enhancing the quality of tomographic imaging.
  • Contributes to advancements in non-destructive testing and materials characterization, facilitating quality control and research.