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Updated: May 30, 2026

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment
Published on: November 9, 2015
Optimal proportional relation between laser power and pulse number for the fabrication of surface-microstructured
Yan Peng1, Ya Wen, DongSheng Zhang
1Engineering Research Center of Optical Instrument and System, Ministry of Education and Shanghai Key Lab of Modern Optical System, Institute of Optical-Electrical Engineering, University of Shanghai for Science and Technology, No. 516 JunGong Road, Shanghai China, 200093. py@usst.edu.cn
Abstract:
We experimentally demonstrate that, under the same laser fluence, there exists an optimal proportional relation between the laser power and pulse number for the fabrication of surface-microstructured silicon. During this fabrication process, the pulse number represents the interaction time between the laser and the silicon, which determines the depth of energy transferred into the inner part of the material, while the laser power determines the ablation and volatilization rate of the silicon. The proper combination of laser power and pulse number can ablate the material on the silicon surface effectively and have enough time to transfer the energy into the deep layer, which can produce microstructured silicon with a high spike. In addition, we compare the absorptance of samples etched by different combinations of laser power and pulse number; the corresponding results further prove the existence of an optimal proportional relation.

