Ferromagnetism
MOS Capacitor
Ferrocement
Electrochemical Cells
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Updated: May 30, 2026

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
Saptarshi Das1, Joerg Appenzeller
1Department of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States. sdas@purdue.edu
Researchers developed a novel nonvolatile memory cell using silicon nanowires and a ferroelectric polymer. This new ferroelectric transistor random access memory (FeTRAM) offers nondestructive readout, improving upon traditional ferroelectric random access memories (FeRAMs).
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