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Magnetic proximity effect as a pathway to spintronic applications of topological insulators
Ivana Vobornik1, Unnikrishnan Manju, Jun Fujii
1Istituto Officina dei Materiali (IOM)-CNR, Laboratorio TASC, in Area Science Park, S.S.14, Km 163.5, I-34149 Trieste, Italy. ivana.vobornik@elettra.trieste.it
Abstract:
Spin-based electronics in topological insulators (TIs) is favored by the long spin coherence(1,2) and consequently fault-tolerant information storage. Magnetically doped TIs are ferromagnetic up to 13 K,(3) well below any practical operating condition. Here we demonstrate that the long-range ferromagnetism at ambient temperature can be induced in Bi(2-x)Mn(x)Te(3) by the magnetic proximity effect through deposited Fe overlayer. This result opens a new path to interface-controlled ferromagnetism in TI-based spintronic devices.
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