Multi-parametric growth of silicon nanowires in a single platform by laser-induced localized heat sources

Nanoscale-synthesized materials hold great promise for the realization of future generation devices. In order to fulfil this exceptional promise, new techniques must be developed that will enable the precise layout and assembly of the heterogeneous components into functional 'superblocks'. Direct synthesis of nanostructures via a laser-assisted chemical vapor deposition process is one promising route. In this paper, laser-assisted silicon nanowire growth based on a vapor-liquid-solid (VLS) mechanism is studied. Spatial confinement of the nanowire growth region via focused laser beam illumination provides a convenient way to examine multiple growth parameters (temperature, time, illumination direction, gas species composition, and pressure), thereby elucidating fundamental mechanisms of laser-assisted growth in a single sample configuration. Furthermore, the work demonstrates an advanced method for direct synthesis of nanostructures for the purpose of practical rapid patterning.