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Updated: May 29, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Edwin Barnes1, Sophia E Economou
1Condensed Matter Theory Center, Department of Physics, University of Maryland, College Park, Maryland 20742-4111, USA.
We present a new method for controlling electron spins in quantum dots, accounting for environmental effects. Our findings reveal significantly faster nuclear relaxation rates than previously reported.
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