Related Experiment Video
Updated: Jan 10, 2026
10:45
Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
Published on: August 29, 2025
637
Highly sensitive electrical detection of TCNE on chemically passivated silicon-on-insulator
Girjesh Dubey1, Federico Rosei, Gregory P Lopinski
1Steacie Institute for Molecular Sciences, NRC-SIMS, 100 Sussex Dr., ON K1A 0R6, Ottawa, Canada.
Chemical Communications (Cambridge, England)
|September 6, 2011
Abstract:
Adsorption of tetracyanoethylene (TCNE) onto hydrogen terminated, n-type silicon-on-insulator is shown to cause significant depletion of majority carriers. Employing an ambient pseudo-MOSFET, ppm levels of TCNE vapour rapidly decrease the n-channel saturation current by at least two orders of magnitude. Covalent passivation with a decyl monolayer improves the reversibility of the response while only slightly decreasing the sensitivity.
