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Updated: May 29, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Hall-effect measurements probing the degree of charge-carrier delocalization in solution-processed crystalline
Jui-Fen Chang1, Tomo Sakanoue, Yoann Olivier
1Cavendish Laboratory, University of Cambridge, United Kingdom.
Abstract:
Intramolecular structure and intermolecular packing in crystalline molecular semiconductors should have profound effects on the charge-carrier wave function, but simple drift mobility measurements are not very sensitive to this. Here we show that differences in the Hall resistance of two soluble pentacene derivatives can be explained with different degrees of carrier delocalization being limited by thermal lattice fluctuations. A combination of Hall measurements, optical spectroscopy, and theoretical simulations provides a powerful probe of structure-property relationships at a molecular level.
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