Related Experiment Video
Updated: May 29, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
Lifshitz transition across the Ag/Cu(111) superlattice band gap tuned by interface doping
Z M Abd El-Fattah1, M Matena, M Corso
1Centro de Física de Materiales CSIC/UPV-EHU-Materials Physics Center, San Sebastián, Spain.
Abstract:
The two-dimensional, free-electron-like band structure of noble metal surfaces can be radically transformed by appropriate nanostructuration. A case example is the triangular dislocation network that characterizes the epitaxial Ag/Cu(111) system, which exhibits a highly featured band topology with a full band gap above E(F) and a hole-pocket-like Fermi surface. Here we show that controlled doping of the Ag/Cu(111) interface with Au allows one to observe a complete Lifshitz transition at 300 K; i.e., the hole pockets fill up, the band gap entirely shifts across E(F), and the Fermi surface becomes electron-pocket-like.
More Related Videos
Related Concept Videos
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Crystal Field Theory - Octahedral Complexes
To explain the observed behavior of transition metal complexes (such as colors), a model involving electrostatic interactions between the electrons from the ligands and the electrons in the unhybridized d orbitals of the central metal atom has been developed. This electrostatic model is crystal field theory (CFT). It helps to understand, interpret, and predict the colors, magnetic behavior, and some structures of coordination compounds of transition metals.
CFT focuses on...
Imperfections in Crystal Structure: Stoichiometric Point Defects
Fermi Level
At absolute zero temperature, electrons fill all energy states up to the Fermi level, leaving upper states empty. As the temperature rises,...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Debye–Huckel–Onsager Conductance Equation

