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Competition between weak localization and antilocalization in topological surface states.

Hai-Zhou Lu1, Junren Shi, Shun-Qing Shen

  • 1Department of Physics, The University of Hong Kong, China.

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|September 10, 2011
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Summary

We present a magnetoconductivity formula for magnetic topological insulators. Magnetic doping opens an energy gap, causing a tunable crossover between weak antilocalization and weak localization in quantum transport.

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Area of Science:

  • Condensed matter physics
  • Materials science

Background:

  • Topological insulators possess unique surface states with potential applications in quantum technologies.
  • Understanding quantum transport phenomena in these materials is crucial for their technological development.

Purpose of the Study:

  • To develop a magnetoconductivity formula for magnetically doped topological insulators.
  • To investigate the interplay of weak localization and weak antilocalization in gapped surface states.

Main Methods:

  • Theoretical formulation of magnetoconductivity.
  • Analysis of quantum transport in the presence of magnetic doping and an energy gap.

Main Results:

  • A competing effect between weak localization and weak antilocalization was revealed.
  • Random magnetic scattering shifts the system between symplectic and unitary classes.
  • An energy gap at the Dirac point induces a tunable crossover from weak antilocalization to weak localization.

Conclusions:

  • The tunable crossover is a unique characteristic of gapped topological insulator surface states.
  • This finding offers insights into quantum diffusion regimes in topological materials.