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Related Concept Videos

P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Spin–Spin Coupling: Two-Bond Coupling (Geminal Coupling)01:20

Spin–Spin Coupling: Two-Bond Coupling (Geminal Coupling)

Two NMR-active nuclei bonded to a central atom can be involved in geminal or two-bond coupling. Geminal coupling is commonly seen between diastereotopic protons in chiral molecules and unsymmetrical alkenes, among others.
The central atom need not be NMR-active because its electrons are affected by the electron polarization of the spin-active atoms. However, spin information is transmitted less effectively than in one-bond coupling, and 2J values are usually weaker than 1J values. The energy of...
Spin–Spin Coupling Constant: Overview01:08

Spin–Spin Coupling Constant: Overview

In bromoethane, the three methyl protons are coupled to the two methylene protons that are three bonds away. In accordance with the n+1 rule, the signal from the methyl protons is split into three peaks with 1:2:1 relative intensities. The methylene protons appear as a quartet, with the relative intensities of 1:3:3:1.
Qualitatively, any spin plus-half nucleus polarizes the spins of its electrons to the minus-half state. Consequently, the paired electron in the hydrogen–carbon bond must have a...

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Related Experiment Video

Updated: May 29, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

Spin-filter Josephson junctions.

Kartik Senapati, Mark G Blamire, Zoe H Barber

    Nature Materials
    |September 13, 2011
    PubMed
    Summary
    This summary is machine-generated.

    Researchers achieved supercurrents using magnetic gadolinium nitride (GdN) barriers, overcoming limitations of previous ferromagnetic insulator Josephson junctions. This work demonstrates tunable critical current properties, opening new avenues for spintronic devices.

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    Published on: June 23, 2017

    Area of Science:

    • Condensed Matter Physics
    • Spintronics
    • Superconductivity

    Background:

    • Josephson junctions with ferromagnetic barriers are crucial for π-junctions and triplet pairing.
    • Previous research focused on metallic ferromagnets, limiting exploration of ferromagnetic insulators (I(F)).
    • Ferromagnetic insulators were predicted to offer unique properties like low-dissipation π-shifts but lacked experimental validation.

    Discussion:

    • This study reports the first experimental realization of supercurrents through magnetic gadolinium nitride (GdN) barriers.
    • The critical current (I(c)) in these junctions exhibits field and temperature dependencies significantly influenced by the I(F) barrier.
    • Spin filtering effects in the GdN barrier, and their modification by magnetic inhomogeneity, are shown to impact Cooper pair tunneling suppression.

    Key Insights:

    • Successful fabrication and characterization of Josephson junctions utilizing a magnetic ferromagnetic insulator (GdN).
    • Demonstration that magnetic inhomogeneity within the GdN barrier can tune the suppression of Cooper pair tunneling.
    • Experimental evidence for unconventional critical current behavior in Josephson junctions with ferromagnetic insulator barriers.

    Outlook:

    • Potential for developing novel spintronic devices and superconducting electronics with tailored properties.
    • Further investigation into magnetic inhomogeneity engineering for advanced control over junction characteristics.
    • Exploration of other ferromagnetic insulator materials for Josephson junction applications.