Charge-transfer processes in the assembly of Si(n)O(m) neutral clusters

The chemical bond formation in oxygen-rich Si(n)O(m) clusters was investigated by sampling the potential energy surface of the model systems SiO + SiO(2) → Si(2)O(3) and (SiO)(2) + SiO(2) → Si(3)O(4) along a two-dimensional reaction coordinate, by density functional theory calculations. Evidence for crossing between the weakly bound neutral-neutral (SiO)(n) + SiO(2) and the highly attractive ion-pair (SiO)(n)(+) + SiO(2)(-) surfaces was found. Analysis of frontier molecular orbitals and charge distribution showed that surface crossing involves transfer of valence electron charge from (SiO)(2) to SiO(2). The sum of the natural atomic charges over the (SiO)(n) and (SiO(2)) groups of the Si(n)O(m) cluster products, gave a net positive charge on the (SiO)(n) "core" and a net negative charge on the (SiO(2)) groups. This is interpreted as the "ion-pair memory" left on the Si(n)O(m) products by the charge-transfer mechanism and may provide a way to assess the role of charge-transfer processes in the assembly of larger Si(n)O(m) neutral clusters.