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Updated: May 29, 2026

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
Published on: August 28, 2018
Silicon nanotube field effect transistor with core-shell gate stacks for enhanced high-performance operation and area
Hossain M Fahad1, Casey E Smith, Jhonathan P Rojas
1Integrated Nanotechnology Lab, Electrical Engineering, Division of Physical Science and Engineering, King Abdullah University of Science and Technology , Thuwal 23955-6900, Saudi Arabia.
Abstract:
We introduce the concept of a silicon nanotube field effect transistor whose unique core-shell gate stacks help achieve full volume inversion by giving a surge in minority carrier concentration in the near vicinity of the ultrathin channel and at the same time rapid roll-off at the source and drain junctions constituting velocity saturation-induced higher drive current-enhanced high performance per device with efficient real estate consumption. The core-shell gate stacks also provide superior short channel effects control than classical planar metal oxide semiconductor field effect transistor (MOSFET) and gate-all-around nanowire FET. The proposed device offers the true potential to be an ideal blend for quantum ballistic transport study of device property control by bottom-up approach and high-density integration compatibility using top-down state-of-the-art complementary metal oxide semiconductor flow.
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