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Updated: May 29, 2026

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
Published on: November 7, 2016
In situ patterning of high-quality crystalline rubrene thin films for high-resolution patterned organic field-effect
Hyeok Moo Lee1, Jae Joon Kim, Jae Hak Choi
1Department of Nuclear and Quantum Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea.
Abstract:
For the realization of high-performance patterned organic field-effect transistors (OFETs), we present a novel approach to fabricate patterned crystalline rubrene thin films by combining an abrupt heating technique and a lift-off process. Crystallization of rubrene thin films and the patterning of the films are accomplished almost simultaneously and in situ by this approach. Consequently, patterned rubrene crystalline films are remarkably rapidly produced within 2 min. High-quality crystalline rubrene patterns with a submicrometer spatial resolution were readily prepared by this approach. OFETs made of submicrometer rubrene crystal wires exhibited mobilities of as high as 4.5 cm(2) V(-1) s(-1) at ambient conditions, which is the highest value reported so far of OFETs based on one-dimensional micro/nano-organic semiconductors.

