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Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators
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Ten Gbit/s ring resonator silicon modulator based on interdigitated PN junctions.

Melissa Ziebell1, Delphine Marris-Morini, Gilles Rasigade

  • 1Institut d’Electronique Fondamentale, Univ Paris-Sud, CNRS, Bât 220, F-91405 Orsay France.

Optics Express
|September 22, 2011
PubMed
Summary
This summary is machine-generated.

This study demonstrates a 10 Gbit/s silicon modulator using carrier depletion. The device achieves high extinction ratios for both TE and TM polarizations, enabling efficient data transmission.

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Area of Science:

  • Photonics
  • Materials Science
  • Electrical Engineering

Background:

  • Silicon photonics is crucial for high-speed optical communication.
  • Modulators are key components in optical transceivers.
  • Carrier depletion modulators offer potential for low power consumption and high speed.

Purpose of the Study:

  • To experimentally demonstrate a 10 Gbit/s silicon modulator.
  • To investigate the performance of carrier depletion modulators in interdigitated PN junctions.
  • To achieve high extinction ratios for both TE and TM polarizations.

Main Methods:

  • Fabrication of a silicon modulator based on carrier depletion in interdigitated PN junctions.
  • Integration of the phase-shifter in a ring resonator.
  • Experimental characterization of extinction ratio, VπLπ, and optical loss.

Main Results:

  • A 10 Gbit/s silicon modulator was successfully demonstrated.
  • Extinction ratios greater than 10 dB were achieved for both TE and TM polarizations.
  • Estimated VπLπ of approximately 2.5 V × cm and optical loss below 1 dB.
  • Successful 10 Gbit/s data transmission with a 4 dB extinction ratio.

Conclusions:

  • The demonstrated silicon modulator is suitable for high-speed optical communication.
  • The interdigitated PN junction design enables efficient modulation with high extinction ratios.
  • This technology holds promise for cost-effective and high-performance silicon photonic devices.