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Related Experiment Video

Updated: May 29, 2026

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators
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Published on: August 8, 2025

Optical attenuation in ion-implanted silicon waveguide racetrack resonators.

J K Doylend1, P E Jessop, A P Knights

  • 1Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea.

Optics Express
|September 22, 2011
PubMed
Summary

Optical absorption in ion-implanted silicon racetrack resonators was studied. A new method determined resonator loss, revealing persistent propagation loss even after annealing, likely due to deep ion implantation.

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Area of Science:

  • Optoelectronics
  • Materials Science
  • Semiconductor Physics

Background:

  • Silicon-on-insulator (SOI) racetrack resonators are key components in photonic integrated circuits.
  • Ion implantation is used for device fabrication but introduces lattice disorder, affecting optical properties.
  • Annealing is typically employed to repair implantation-induced damage.

Purpose of the Study:

  • To quantify optical absorption near 1550 nm in ion-implanted SOI racetrack resonators.
  • To develop a novel method for independently determining resonator coupling and round-trip loss.
  • To investigate the impact of annealing temperature on optical loss.

Main Methods:

  • Optical absorption measurements were performed on ion-implanted SOI racetrack resonators.

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  • Output characteristics of the bus waveguide were analyzed as a function of lattice disorder concentration.
  • A new experimental procedure was developed to determine coupling and round-trip loss.

    • Main Results:

    • Significant optical absorption was observed near 1550 nm.
    • A novel method successfully determined coupling and round-trip loss independently.
    • Persistent propagation loss was found even after annealing at temperatures sufficient to repair most damage.

    Conclusions:

    • The developed method offers general applicability for characterizing resonator loss parameters.
    • High annealing temperatures do not fully eliminate propagation loss in these devices.
    • The persistent loss is attributed to ion implantation depth exceeding the silicon waveguide layer thickness.