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Fabrication of 1-D Photonic Crystal Cavity on a Nanofiber Using Femtosecond Laser-induced Ablation
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Doubling the spatial frequency with cavity resonance lithography.

Hyesog Lee1, Ravi Verma

  • 1Tanner Research Inc., 825 S. Myrtle Ave., Monrovia, CA 91016, USA. Joe.lee@tanner.com

Optics Express
|September 22, 2011
PubMed
Summary

Cavity Resonance Lithography (CRL) is a novel double patterning technique that creates sub-diffraction limit patterns using a single exposure. This advanced lithography method achieves 32.5 nm half-pitch patterns with standard materials.

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Area of Science:

  • Nanotechnology
  • Lithography
  • Materials Science

Background:

  • Current lithography techniques face limitations due to the diffraction limit, restricting the minimum feature size achievable.
  • Double patterning (DP) techniques aim to overcome these limitations but often require multiple complex steps.
  • There is a need for advanced lithography methods that can produce smaller features efficiently.

Purpose of the Study:

  • To introduce and experimentally demonstrate Cavity Resonance Lithography (CRL), a novel double patterning technique.
  • To showcase CRL's ability to generate patterns with twice the spatial frequency of the lithography mask.
  • To validate CRL's capability for creating sub-diffraction limit patterns in a single exposure and development step.

Main Methods:

  • Theoretical framework development for Cavity Resonance Lithography (CRL).
  • Experimental demonstration using 193 nm illumination and commercially available photoresists (PR) and developers.
  • Analysis of pattern generation at an offset distance in the far field of the mask.

Main Results:

  • Successful experimental demonstration of CRL, achieving a 32.5 nm half-pitch pattern.
  • Generated patterns with twice the spatial frequency of the diffraction-limited mask.
  • Patterning achieved at an offset distance of 180 nm, far beyond evanescent decay scales.

Conclusions:

  • Cavity Resonance Lithography (CRL) effectively overcomes the diffraction limit for pattern generation.
  • CRL offers a simplified double patterning approach requiring only a single exposure and development step.
  • The technique shows potential for further improvement in minimum feature size and implementation.