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Bartos Chmielak1, Michael Waldow, Christopher Matheisen

  • 1Institute of Semiconductor Electronics (IHT), RWTH Aachen University, Aachen, Germany. chmielak@iht.rwth-aachen.de

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Researchers created a novel electro-optic modulator using strained silicon rib-waveguides. This device breaks silicon

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Area of Science:

  • Photonics and Materials Science
  • Integrated Optics
  • Semiconductor Devices

Background:

  • Silicon photonics typically lacks strong electro-optic effects due to silicon's centrosymmetric crystal structure.
  • Existing electro-optic modulators often rely on external electric fields or less efficient material systems.
  • Breaking silicon's inversion symmetry is key to enabling linear electro-optic modulation.

Purpose of the Study:

  • To demonstrate a fully integrated electro-optic modulator based on locally strained silicon rib-waveguides.
  • To induce and characterize a linear electro-optic effect in silicon by breaking its inversion symmetry.
  • To achieve a record high second-order nonlinear susceptibility in silicon.

Main Methods:

  • Fabrication of silicon rib-waveguides with a deposited Si3N4 strain layer.
  • Induction of asymmetric strain in the silicon crystal lattice.
  • Electro-optic characterization to measure effective index change versus modulation voltage.
  • Micro-Raman spectroscopy to map local strain distribution.
  • Terahertz (THz) difference frequency generation (DFG) to probe optical activity.

Main Results:

  • Demonstration of a fully integrated electro-optic modulator.
  • Achieved a record second-order nonlinear susceptibility (χ(2)(yyz)) of 122 pm/V in strained silicon.
  • Observed a strict linear relationship between modulation voltage and effective index change.
  • Correlated local strain distribution with induced second-order optical activity.

Conclusions:

  • Local strain engineering effectively breaks silicon's inversion symmetry, enabling a linear electro-optic effect.
  • The strained silicon rib-waveguide modulator offers a promising pathway for high-performance integrated photonic devices.
  • This work establishes a new benchmark for electro-optic modulation in silicon photonics.