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Comprehensive analysis of electrically-pumped GaSb-based VCSELs.
S Arafin1, A Bachmann, K Vizbaras
1Walter Schottky Institut, Technische Universität München, Garching, Germany. arafin@wsi.tum.de
Optics Express
|September 22, 2011
Summary
This study explores performance factors in GaSb-based VCSELs for mid-infrared lasers. Optimized design insights are provided for improved device physics and sensing applications.
Area of Science:
- Optoelectronics
- Semiconductor Lasers
- Mid-Infrared Technology
Background:
- Gallium Antimonide (GaSb)-based Vertical-Cavity Surface-Emitting Lasers (VCSELs) are crucial for mid-infrared applications.
- Understanding internal device physics is key to optimizing performance.
- Buried tunnel junction VCSELs offer specific advantages for performance tuning.
Purpose of the Study:
- To investigate performance-related aspects of electrically-pumped GaSb-based buried tunnel junction VCSELs.
- To provide deeper insights into internal device physics for improved laser design.
- To demonstrate the suitability of these lasers for sensing applications.
Main Methods:
- Theoretical analysis and experimental results were utilized.
- Device physics investigated include carrier diffusion, operating temperature, diffraction loss, and gain/loss parameters.
- A two-dimensional (2-D) finite element method was employed for thermal modeling.
Main Results:
- Detailed analysis of internal device physics, including radial carrier diffusion and internal temperature.
- Determination of key parameters like maximum continuous-wave operating temperature and internal quantum efficiency.
- Successful application demonstrated for water vapor concentration measurement using wavelength modulation spectroscopy (WMS).
Conclusions:
- The study provides critical insights for designing high-performance mid-infrared lasers.
- GaSb-based VCSELs are well-suited for targeted sensing applications, such as water vapor monitoring.
- Optimized design based on these findings can lead to enhanced device performance.
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