Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Dielectric Polarization in a Capacitor01:31

Dielectric Polarization in a Capacitor

The presence of a dielectric medium in a capacitor not only changes the voltage and capacitance but also affects the electric field. In general, dielectrics can be of two types: polar and nonpolar. In a polar dielectric, the positive and negative charges in the molecules are separated by a distance and hence have a permanent dipole moment. In contrast, no such charge separation exists in a nonpolar dielectric, however the nonpolar molecules get polarized in the presence of an external electric...
Potential Due to a Polarized Object01:29

Potential Due to a Polarized Object

A neutral atom consists of a positively charged nucleus surrounded by a negatively charged electron cloud. When placed in an external electric field, the external electric force pulls the electrons and nucleus apart, opposite to the intrinsic attraction between the nucleus and the electrons. The opposing forces balance each other with a slight shift between the center of masses of the nucleus and the electron cloud, resulting in a polarized atom. On the other hand, a few molecules, like water,...
Induced Electric Dipoles01:28

Induced Electric Dipoles

A permanent electric dipole orients itself along an external electric field. This rotation can be quantified by defining the potential energy because the external torque does work in rotating it. Then, the potential energy is minimum at the parallel configuration and maximum at the antiparallel configuration. While the former is a stable equilibrium, the latter is an unstable equilibrium.
Since the absolute value of potential energy holds no physical meaning, its zero value can be chosen as per...
Ferromagnetism01:31

Ferromagnetism

Materials like iron, nickel, and cobalt consist of magnetic domains, within which the magnetic dipoles are arranged parallel to each other. The magnetic dipoles are rigidly aligned in the same direction within a domain by quantum mechanical coupling among the atoms. This coupling is so strong that even thermal agitation at room temperature cannot break it. The result is that each domain has a net dipole moment. However, some materials have weaker coupling, and are ferromagnetic at lower...
Fermi Level Dynamics01:12

Fermi Level Dynamics

The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Electrochemical Systems01:24

Electrochemical Systems

Electrochemical systems provide a fascinating insight into the dynamic interplay of charged species within various phases. One notable example is the interaction between a membrane permeable to K⁺ ions but not to Cl⁻ ions, separating an aqueous KCl solution from pure water. As K⁺ ions diffuse through the membrane, they generate net charges on each phase, leading to a potential difference between them.Similarly, when a piece of Zn is immersed in an aqueous ZnSO₄ solution, the Zn metal, composed...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Dataset for computational and experimental buckling analysis of constant-stiffness and variable-stiffness composite cylinders.

Data in brief·2024
Same author

Inverse differential quadrature method: mathematical formulation and error analysis.

Proceedings. Mathematical, physical, and engineering sciences·2022
Same author

Simultaneous Large Optical and Piezoelectric Effects Induced by Domain Reconfiguration Related to Ferroelectric Phase Transitions.

Advanced materials (Deerfield Beach, Fla.)·2021
Same author

Static analysis of composite beams on variable stiffness elastic foundations by the Homotopy Analysis Method.

Acta mechanica·2021
Same author

Investigation of Electrochemical, Optical and Thermal Effects during Flash Sintering of 8YSZ.

Materials (Basel, Switzerland)·2018
Same author

Adaptive compliant structures for flow regulation.

Proceedings. Mathematical, physical, and engineering sciences·2017

Related Experiment Video

Updated: May 29, 2026

Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals
07:03

Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals

Published on: August 15, 2018

Polarization dynamics and non-equilibrium switching processes in ferroelectrics.

Marian Vopsaroiu1, Paul M Weaver, Markys G Cain

  • 1National Physical Laboratory Teddington, UK. mv1@npl.co.uk

IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
|September 23, 2011
PubMed
Summary

This study presents a non-equilibrium statistical model for ferroelectric polarization dynamics, explaining time- and temperature-dependent effects in non-volatile memories. The model accurately predicts domain wall velocity and coercive fields, validated by experimental data.

More Related Videos

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides
09:41

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides

Published on: May 29, 2018

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

Related Experiment Videos

Last Updated: May 29, 2026

Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals
07:03

Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals

Published on: August 15, 2018

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides
09:41

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides

Published on: May 29, 2018

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

Area of Science:

  • Condensed matter physics
  • Materials science
  • Statistical mechanics

Background:

  • Ferroelectric materials are crucial for non-volatile memory devices.
  • Understanding time- and temperature-dependent effects is vital for device operation.
  • Current models often lack comprehensive explanations for polarization dynamics.

Purpose of the Study:

  • To develop a non-equilibrium statistical model for ferroelectric polarization dynamics.
  • To derive analytical expressions for time- and temperature-dependent phenomena.
  • To validate the model with experimental ferroelectric P-E loop data.

Main Methods:

  • Utilizing a domain nucleation process for polarization reversal.
  • Applying a non-equilibrium statistical framework.
  • Comparing theoretical predictions with experimental data for soft ferroelectrics.

Main Results:

  • Analytical expressions for time- and temperature-dependent effects were derived.
  • Domain wall velocity consistent with creep behavior was obtained.
  • The model accurately predicted experimental coercive fields across temperatures.

Conclusions:

  • The non-equilibrium statistical model provides a robust framework for understanding ferroelectric behavior.
  • The derived expressions offer predictive power for device performance.
  • The model successfully explains experimental observations in soft ferroelectrics.