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Updated: May 29, 2026

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

Improved screening ability of ferroelectric-semiconductor interface.

Maxim Y Gureev¹, Alexander K Tagantsev, Nava Setter

¹Ceramics Laboratory, Swiss Federal Institute of Technology (EPFL), Lausanne, Switzerland. maxim.gureev@epfl.ch

IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control

|September 23, 2011

Summary

Integrating ferroelectrics on silicon is promising, but thin film instability is a challenge. Built-in potential in semiconductors can improve interface screening, enhancing ferroelectric device stability.

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Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals

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Area of Science:

Materials Science
Condensed Matter Physics
Semiconductor Physics

Background:

Ferroelectric-semiconductor devices offer novel functionalities.
Thin ferroelectric films on semiconductors face instability issues.
Interface screening significantly impacts ferroelectric state stability.

Purpose of the Study:

To investigate the role of built-in potential in ferroelectric-semiconductor interfaces.
To understand how to enhance the stability of thin ferroelectric films on silicon.
To explore material selection strategies for improved device performance.

Main Methods:

Theoretical analysis of interface screening mechanisms.
Modeling the influence of semiconductor built-in potential.
Investigating the dependence on electron affinities and surface states.

Main Results:

Built-in potential in semiconductors strongly influences interface screening.
This built-in potential can stabilize the ferroelectric state in thin films.
Screening ability is controllable via material choice, affecting electron affinities and surface states.

Conclusions:

Semiconductor built-in potential is a critical factor for stable ferroelectric-semiconductor integration.
Careful material selection offers a pathway to control interface properties and enhance device stability.
This work provides insights for designing robust ferroelectric-semiconductor devices.