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Related Experiment Video

Updated: May 29, 2026

Ultrahigh Density Array of Vertically Aligned Small-molecular Organic Nanowires on Arbitrary Substrates

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Published on: June 18, 2013

Unit cell parameters of wurtzite InP nanowires determined by x-ray diffraction.

D Kriegner¹, E Wintersberger, K Kawaguchi

¹Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenbergerstrasse 69, A-4040 Linz, Austria. dominik.kriegner@jku.at

|September 23, 2011

Summary

High-resolution X-ray diffraction reveals unique structural properties of S-doped wurtzite Indium Phosphide (InP) nanowires. Lattice parameters differ from cubic InP, with expanded c-direction and reduced a-direction atomic spacing.

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Area of Science:

Materials Science
Nanotechnology
Solid State Physics

Background:

Indium Phosphide (InP) is a crucial semiconductor material.
Wurtzite polytypes of InP nanowires are of interest for electronic and optical applications.
Understanding their structural properties is essential for device development.

Purpose of the Study:

To investigate the structural properties of wurtzite InP nanowires.
To determine the precise lattice parameters of the wurtzite InP polytype.
To provide data for ab initio calculations of electronic and optical properties.

Main Methods:

High-resolution X-ray diffraction (HRXRD) was employed.
Metal-organic vapor phase epitaxy (MOVPE) was used for nanowire growth.
S-doping was utilized during the growth process.
Core/shell nanowire structures were analyzed to isolate material properties.

Main Results:

Lattice parameters of wurtzite InP nanowires were determined.
Unit cell dimensions were found to deviate from geometric predictions based on cubic InP.
Atomic distances along the c-direction increased, while spacing in the a-direction decreased compared to zinc-blende InP.
The influence of S-doping on lattice parameters was minimized in core/shell structures.

Conclusions:

The study precisely determined the lattice parameters of wurtzite InP nanowires.
Structural differences between wurtzite and zinc-blende InP were quantified.
The obtained material properties are vital for theoretical modeling and future device design.