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Updated: May 29, 2026
Ultrafast Laser-Ablated Nanoparticles and Nanostructures for Surface-Enhanced Raman Scattering-Based Sensing Applications
Published on: June 16, 2023
Using Si and Ge nanostructures as substrates for surface-enhanced Raman scattering based on photoinduced charge
Xiaotian Wang1, Wensheng Shi, Guangwei She
1Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China.
Abstract:
The possibility of utilizing the Si and Ge nanostructures to promote surface-enhanced Raman scattering (SERS) is discussed. The vibronic coupling of the conduction band and valence band states of Si or Ge with the excited and ground states of the target molecule during the charge transfer (CT) process could enhance the molecular polarizability tensor. Using H-terminated silicon nanowire (H-SiNW) and germanium nanotube (H-GeNT) arrays as substrates, significant Raman enhancement of the standard probes, Rodamine 6G (R6G), dye (Bu(4)N)(2)[Ru(dcbpyH)(2)-(NCS)(2)] (N719), and 4-aminothiophenol (PATP), are demonstrated. The abundant hydrogen atoms terminated on the surface of SiNW and GeNT arrays play a critical role in promoting efficient CT and enable the SERS effect.
