Updated: May 29, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
Daniel G Stroppa1, Luciano A Montoro, Armando Beltrán
1Brazilian Nanotechnology National Laboratory, Campinas, P.O. 6192, Brazil.
Characterizing dopant distribution in antimony-doped tin oxide (Sb:SnO(2)) nanocrystals is crucial for device performance. This study combined advanced imaging and calculations to model dopant segregation, revealing its impact on surface energy.
You might also read
Articles linked to this work by shared authors, journal, and citation graph.
Area of Science:
Background:
Purpose of the Study:
Main Methods:
Main Results:
Conclusions: