Related Experiment Video

Updated: May 29, 2026

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

Anodized aluminum oxide thin films for room-temperature-processed, flexible, low-voltage organic non-volatile memory

Martin Kaltenbrunner1, Philipp Stadler, Reinhard Schwödiauer

  • 1Soft Matter Physics, Johannes Kepler University, Altenbergerstr. 69, 4040 Linz, Austria. martin.kaltenbrunner@jku.at

Advanced Materials (Deerfield Beach, Fla.)
|September 30, 2011
PubMed
Abstract

No abstract available in PubMed .

More Related Videos

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors12:32

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Published on: May 24, 2020

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...