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Updated: May 28, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Ab initio study of isolated chlorine defects in cubic SiC
1Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-katsura, Nishikyo, Kyoto 615-8510, Japan. giovanni@semicon.kuee.kyoto-u.ac.jp
Abstract:
The electronic properties and formation energy of isolated Cl defects in SiC were investigated by first-principles calculations. Chlorine was studied in a substitutional position, in either a carbon (Cl(C)) or a silicon site (Cl(Si)), and in two interstitial positions (Cl(i)), either tetrahedral or octahedral configurations. Our calculations revealed that Cl(C) is energetically favored and it is a likely candidate to explain the nature of the experimentally observed Cl incorporation reported in SiC epilayers grown by chloride-based chemical vapor deposition.
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