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Updated: May 28, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
Published on: July 17, 2020
Auger-decay dynamics of germanium nano-islands in silicon
Brian Julsgaard1, Peter Balling, John Lundsgaard Hansen
1Department of Physics and Astronomy, Aarhus University, Ny Munkegade 120, DK-8000 Aarhus C, Denmark. brianj@phys.au.dk
Abstract:
The decay dynamics of self-assembled germanium islands is studied by time-resolved fluorescence spectroscopy. The scaling behavior of the decay rate with the number of excitons in the islands is shown to agree with expectations for an Auger-recombination-dominated process in the asymptotic limit of high exciton numbers. The multi-excitonic decay time and spectral behavior are compared to theoretical estimates.
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