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Selective formation of tungsten nanowires
Daniel Cs Bien1, Rahimah Mohd Saman, Siti Aishah Mohamad Badaruddin
1Nanoelectronics Cluster, MIMOS Berhad, Technology Park Malaysia, 57000 Kuala Lumpur, Malaysia. daniel.bien@mimos.my.
Nanoscale Research Letters
|October 6, 2011
Summary
Researchers developed a new method to create self-aligned tungsten nanowires using selective chemical vapor deposition. These tungsten nanowires exhibit superior electrical conductivity compared to polysilicon nanowires.
Area of Science:
- Materials Science
- Nanotechnology
- Electrical Engineering
Background:
- Fabricating aligned nanowires is crucial for advanced electronic devices.
- Existing methods often require complex lithography and multiple processing steps.
- Tungsten and polysilicon are key materials in semiconductor fabrication.
Purpose of the Study:
- To develop a novel, self-aligned process for fabricating tungsten nanowires.
- To investigate the electrical properties of these tungsten nanowires.
- To compare the conductivity of tungsten nanowires with polysilicon nanowires.
Main Methods:
- Utilized polysilicon sidewall transfer technology.
- Employed selective chemical vapor deposition (CVD) with WF6 precursor for tungsten deposition.
- Characterized the electrical conductivity of the fabricated nanowires.
Main Results:
- Successfully fabricated self-aligned tungsten nanowires as thin as 10 nm.
- Achieved 100% selectivity for tungsten deposition on polysilicon regions.
- Tungsten nanowires demonstrated 40% higher electrical conductivity than similar polysilicon nanowires.
- Demonstrated the ability to create electrically isolated nanowires.
Conclusions:
- The developed selective CVD process offers an efficient route to self-aligned tungsten nanowires.
- This technique eliminates the need for lithography, simplifying fabrication.
- The superior conductivity of tungsten nanowires makes them promising for next-generation electronics.
