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Related Concept Videos

Photoelectric Effect02:26

Photoelectric Effect

When light of a particular wavelength strikes a metal surface, electrons are emitted. This is called the photoelectric effect. The minimum frequency of light that can cause such emission of electrons is called the threshold frequency, which is specific to the metal. Light with a frequency lower than the threshold frequency, even if it is of high intensity, cannot initiate the emission of electrons. However, when the frequency is higher than the threshold value, the number of electrons ejected...
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P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
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Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...

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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Negative and positive persistent photoconductance in graphene.

Chandan Biswas1, Fethullah Güneş, Dinh Loc Duong

  • 1SKKU Advanced Institute of Nanotechnology, WCU Department of Energy Science, Graphene Center, Sungkyunkwan University, Suwon 440-746, Republic of Korea.

Nano Letters
|October 7, 2011
PubMed
Summary

Graphene exhibits unusual persistent negative and positive photoconductance, lasting hours. This light-induced conductivity differs significantly from semiconductors and nanoparticles due to graphene's environmental interactions.

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Concurrent Quantitative Conductivity and Mechanical Properties Measurements of Organic Photovoltaic Materials using AFM
08:59

Concurrent Quantitative Conductivity and Mechanical Properties Measurements of Organic Photovoltaic Materials using AFM

Published on: January 23, 2013

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Persistent photoconductance (PC) is a known phenomenon in semiconductors, characterized by prolonged light-induced conductivity.
  • Graphene, a 2D material, has unique electronic properties due to its structure and high surface area.

Purpose of the Study:

  • To investigate and report persistent negative and positive photoconductance in graphene.
  • To characterize the yields and response times of these photoconductive effects in graphene.
  • To explore the environmental and structural factors influencing graphene's persistent photoconductance.

Main Methods:

  • Experimental observation and measurement of photoconductance in graphene samples.
  • Varying experimental conditions such as multilayer vs. monolayer graphene and vacuum vs. ambient environments.
  • Quantifying the percentage yield of negative and positive PC and measuring transient response times.

Main Results:

  • Observed persistent negative photoconductance (34% yield) and prominent persistent positive photoconductance (1652% yield) in graphene.
  • Recorded a remarkably long negative transient response time of several hours.
  • Found that high yields were reduced in multilayer graphene and eliminated under vacuum conditions.

Conclusions:

  • Graphene exhibits unique persistent photoconductance phenomena distinct from 3D semiconductors.
  • The observed effects are attributed to strong interactions between 2D metallic graphene and its environment or substrate.
  • Environmental factors and graphene layering significantly influence the magnitude and persistence of photoconductance.