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Structure-dependent band dispersion in epitaxial anthracene films
F Bussolotti1, Y Yamada-Takamura, Y Wang
1School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), 1-1, Asahidai, Nomi, Ishikawa 923-1292, Japan.
The highest occupied molecular orbital band dispersion in anthracene films on bismuth was measured. This reveals how lattice parameters influence electronic properties and band curvature in organic semiconductors.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Surface Science
Background:
- Epitaxial growth of organic molecules on inorganic substrates is crucial for organic electronics.
- Understanding intermolecular interactions is key to controlling electronic properties.
Purpose of the Study:
- To measure and analyze the intermolecular band dispersion of the highest occupied molecular orbital (HOMO) in epitaxial anthracene multilayer films.
- To investigate the influence of substrate lattice parameters on electronic band structure.
Main Methods:
- Angle-resolved ultraviolet photoelectron spectroscopy (ARUPS) was employed to probe the electronic structure.
- Comparison of experimental data with anthracene films on different substrates (Bi(0001) and Cu(110)).
Main Results:
- The intermolecular band dispersion of the HOMO was successfully measured for anthracene on Bi(0001).
- Lattice parameters significantly affect transfer integrals and on-site energy differences.
- Band curvature along high-symmetry directions is modulated by substrate-molecule interactions.
Conclusions:
- The study demonstrates a clear link between substrate lattice structure and the electronic band dispersion of organic thin films.
- This work provides insights into controlling charge transport in organic semiconductor interfaces.
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