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Scanning-probe Single-electron Capacitance Spectroscopy
Published on: July 30, 2013
Electrochemical isothermal-capacitance-transient spectroscopy: a new depth profiling method of deep levels
1Center for Interdisciplinary Research, Tohoku University, Aoba 6-3, Aramaki, Sendai 980-8578, Japan.
The Review of Scientific Instruments
|October 7, 2011
Summary
Researchers developed electrochemical isothermal-capacitance-transient spectroscopy (EICTS) for deep-level profiling. This new method accurately assesses deep levels in wide-bandgap semiconductors like ZnSe:N films.
Area of Science:
- Semiconductor Physics
- Materials Science
Background:
- Deep levels in semiconductors significantly impact device performance.
- Characterizing deep levels in wide-bandgap materials is challenging due to point defects.
Purpose of the Study:
- Introduce a novel depth profiling method for deep levels: electrochemical isothermal-capacitance-transient spectroscopy (EICTS).
- Validate EICTS by applying it to ZnSe:N epitaxial films.
Main Methods:
- Combined electrochemical capacitance-voltage (ECV) with isothermal-capacitance-transient spectroscopy (ICTS).
- Utilized Schottky barriers with etchable electrolytes.
- Analyzed capacitance-transient profiles at fixed temperatures.
Main Results:
- Demonstrated the validity of EICTS on ZnSe:N epitaxial films (>1000 nm thickness).
- Obtained deep-level characteristics consistent with conventional techniques.
- Showcased EICTS's effectiveness for wide-bandgap semiconductors.
Conclusions:
- EICTS is a powerful technique for depth profiling deep levels.
- The method is particularly effective for assessing defects in wide-bandgap semiconductors.
- EICTS offers a reliable approach for defect analysis in materials like ZnSe:N.
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