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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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Structure, sodium ion role, and practical issues for β-alumina as a high-k solution-processed gate layer for

Bo Zhang1, Yu Liu, Shweta Agarwala

  • 1Department of Materials Science and Engineering, Johns Hopkins University, 206 Maryland Hall, 3400 North Charles Street, Baltimore, Maryland 21218, USA.

ACS Applied Materials & Interfaces
|October 8, 2011
PubMed

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