Imperfections in Crystal Structure: Point, Line and Plane Defects
Imperfections in Crystal Structure: Stoichiometric Point Defects
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Updated: May 28, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Jie Zhang1, Bruce W Drinkwater, Paul D Wilcox
1Department of Mechanical Engineering, University of Bristol, Bristol, UK. j.zhang@bristol.ac.uk
Numerical models simulate ultrasonic wave scattering from rough cracks. The Kirchhoff model efficiently approximates the Finite Element Local Scattering (FELS) model for defect characterization, revealing roughness impacts on scattering behavior.
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