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Electrospray Deposition of Uniform Thickness Ge23Sb7S70 and As40S60 Chalcogenide Glass Films
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Free carrier accumulation during direct laser writing in chalcogenide glass by light filamentation

Ophélie Caulier1, David Le Coq, Laurent Calvez

  • 1Laboratoire de Physico Chimie de l’Atmosphere, EA CNRS 4493, Universite du Littoral Cote d’Opale, 59140 Dunkerque, France.

Optics Express
|October 15, 2011
PubMed

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Carrier Generation and Recombination01:22

Carrier Generation and Recombination

Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...