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Updated: May 28, 2026

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis
Published on: May 10, 2021
Structure and properties of single crystalline CaMg2Bi2, EuMg2Bi2, and YbMg2Bi2
Andrew F May1, Michael A McGuire, David J Singh
1Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA. mayaf@ornl.gov
Abstract:
Single crystals of CaMg(2)Bi(2), EuMg(2)Bi(2), and YbMg(2)Bi(2) were obtained from a Mg-Bi flux cooled to 650 °C. These materials crystallize in the CaAl(2)Si(2) structure-type (P ̅3m1, No. 164), and crystal structures are reported from refinements of single crystal and powder X-ray diffraction data. EuMg(2)Bi(2) displays an antiferromagnetic transition near 7 K, which is observed via electrical resistivity, magnetization, and specific heat capacity measurements. Magnetization measurements on YbMg(2)Bi(2) reveal a weak diamagnetic moment consistent with divalent Yb. Despite charge-balanced empirical formulas, all three compounds are p-type conductors with Hall carrier concentrations of 2.0(3) × 10(19) cm(-3) for CaMg(2)Bi(2), 1.7(1) × 10(19) cm(-3) for EuMg(2)Bi(2), and 4.6(7) × 10(19) cm(-3) for YbMg(2)Bi(2), which are independent of temperature to 5 K. The electrical resistivity decreases with decreasing temperature and the resistivity ratios ρ(300 K)/ρ(10 K) ≤ 1.6 in all cases, indicating significant defect scattering.
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