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Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis
Published on: May 10, 2021
Crystal field splitting in correlated systems with negative charge-transfer gap
A V Ushakov1, S V Streltsov, D I Khomskii
1II. Physikalisches Institut, Universität zu Köln, Zülpicher Strasse 77, D-50937 Köln, Germany. ushakov@ph2.uni-koeln.de
In transition metal compounds with negative charge-transfer gaps, crystal field splitting shows unique features. Covalency effects dominate Coulomb interactions, influencing d-level ordering in these materials.
Area of Science:
- Solid State Chemistry
- Computational Materials Science
- Quantum Chemistry
Background:
- Crystal field theory explains d-level splitting in transition metal compounds.
- Charge-transfer gaps significantly influence electronic structure and bonding.
- Negative charge-transfer gaps imply d-electrons occupy bonding states.
Purpose of the Study:
- Investigate crystal field splitting in transition metal compounds with small or negative charge-transfer gaps.
- Analyze the interplay between Coulomb and covalent contributions to d-level splitting.
- Verify theoretical predictions using ab initio calculations.
Main Methods:
- Theoretical analysis of crystal field splitting mechanisms.
- Ab initio band structure calculations.
- Electronic structure analysis of Cs(2)Au(2)Cl(6).
Main Results:
- Coulomb and covalent contributions to t(2g)-e(g) splitting have opposing signs for negative charge-transfer gaps.
- In Cs(2)Au(2)Cl(6), e(g)-levels lie below t(2g)-levels due to dominant p-d covalency.
- Conduction band states are primarily ligand p-states with minor metal d-state admixture.
Conclusions:
- P-d covalency is a dominant factor in crystal field splitting for compounds with negative charge-transfer gaps.
- The electronic structure of Cs(2)Au(2)Cl(6) confirms theoretical predictions regarding level ordering.
- Understanding these effects is crucial for designing materials with specific electronic properties.
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