Residual microstructure associated with impact craters in TiB2/2024Al composite

Q Guo1, D L Sun, L T Jiang

  • 1School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China.

Micron (Oxford, England : 1993)
|October 25, 2011
PubMed
Summary

Hypervelocity impacts on titanium diboride/aluminum composites create new aluminum oxide phases and alter microstructures. These changes include stacking faults in titanium diboride particles and nanograin formation in the aluminum matrix.

Related Concept Videos

Residual Stresses01:26

Residual Stresses

Residual stresses reside in a structure even after removing the original stress inducer. This phenomenon often arises from varied plastic deformations across different parts of a structure. Consider a rod stretched beyond its yield point. It will not regain its original length due to permanent deformation. Even after load removal, the rod does not entirely lose stress because of uneven plastic deformations, resulting in residual stresses. The computation of these stresses in structures is...
Microcracking in Concrete01:20

Microcracking in Concrete

Microcracking in concrete refers to the tiny cracks that can form within the material even before any external load is applied. These microcracks typically occur at the interface between the coarse aggregate and the hydrated cement paste, often as a result of differential volume changes prompted by variations in stress-strain behavior, as well as thermal and moisture movement. Initially, these microcracks remain stable and do not grow substantially until the concrete is stressed to about 30...
Imperfections in Crystal Structure: Stoichiometric Point Defects01:26

Imperfections in Crystal Structure: Stoichiometric Point Defects

Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...
Residual Stresses in Circular Shafts01:10

Residual Stresses in Circular Shafts

In materials that exhibit elastic and plastic behavior, known as elastoplastic materials, residual stresses can accumulate when these materials experience plastic deformation. This deformation arises from either high levels of shearing stress or significant strains. Residual stresses are internal stresses that persist within a material after removing the external force causing deformation. This phenomenon is demonstrated when observing the behavior of a shaft under torque; notably, the shaft's...
Imperfections in Crystal Structure: Non-Stoichiometric Defects01:29

Imperfections in Crystal Structure: Non-Stoichiometric Defects

Non-stoichiometric defects refer to a type of defect in the crystal structure of a compound where the ratio of its constituent elements deviates from the ideal stoichiometric ratio. There are two main types of non-stoichiometric defects: metal excess defects and metal deficiency defects.Metal excess defects occur when there is a slight surplus of metal ions than what is required by the stoichiometric ratio of the compound. For example, heating a sodium chloride crystal in sodium vapor results...
Imperfections in Crystal Structure: Point, Line and Plane Defects01:25

Imperfections in Crystal Structure: Point, Line and Plane Defects

A perfect crystal, in theory, has a uniform structure with the same unit cell and lattice points throughout. However, any deviation from this periodic arrangement is known as an imperfection or defect. These defects can be categorized into three types: point, line, and plane defects.Point defects occur when there is a deviation from the ideal due to missing atoms, displaced atoms, or additional atoms. These imperfections might occur due to imperfect packing during crystallization or because of...