Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Experiment Video

Updated: May 28, 2026

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

Flexible memristive memory array on plastic substrates.

Seungjun Kim1, Hu Young Jeong, Sung Kyu Kim

  • 1Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Republic of Korea.

Nano Letters
|October 27, 2011
PubMed
Summary
This summary is machine-generated.

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Does Recording Hardware Matter for Clinical Speech Recognition? Evaluating ASR Performance Across Consumer Devices.

medRxiv : the preprint server for health sciences·2026
Same author

What do clinicians edit in ambient AI-drafted clinical documentation? A qualitative content analysis.

Journal of the American Medical Informatics Association : JAMIA·2026
Same author

SelfBlending: Artificial Intelligence-Driven Augmentation With Hand Interactions for Seamless Reality Blending in Virtual Environments.

IEEE transactions on visualization and computer graphics·2026
Same author

Reduced-Port Laparoscopic Distal Gastrectomy in Patients Aged ≥ 75 Years Versus <75 Years: Comparable Surgical Outcomes and Higher Medical Complication Events.

Medicina (Kaunas, Lithuania)·2026
Same author

Epitaxial n-ZnO/MoS<sub>2</sub>/p-GaN Heterostructure Light-Emitting Diodes.

Nano letters·2026
Same author

Applying natural language processing and large language models to clinical notes for phenotyping and diagnosing rare diseases: a systematic review.

Journal of the American Medical Informatics Association : JAMIA·2026
Same journal

Higher-Order Clustering of Receptors Real-Time Projected by Plasmon-ruler on the Single Live Cell.

Nano letters·2026
Same journal

Achieving Fermi-Level Depinning and Ideal Metal Contact in <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Devices via MXene Integration.

Nano letters·2026
Same journal

AI-Assisted Electron Microscopy in Structure-Performance Analysis of Advanced Catalysts: From Atomic Resolution to Statistical Significance.

Nano letters·2026
Same journal

Electrically Switchable Ultraslow Dispersionless Polaritons via Twist Engineering in van der Waals Heterostructures.

Nano letters·2026
Same journal

Correction to "Ultrasonication-Triggered Ubiquitous Assembly of Magnetic Janus Amphiphilic Nanoparticles in Cancer Theranostic Applications".

Nano letters·2026
Same journal

Tunable Proximity Valley Splitting Via Interfacial Exchange Pinning in WSe<sub>2</sub>-CrBr<sub>3</sub>-CrPS<sub>4</sub> Heterostructures.

Nano letters·2026
See all related articles

Researchers developed a flexible NOR-type resistive random-access memory (RRAM) using a 1T-1M structure. This innovation overcomes cell interference, enabling high-performance flexible electronics and nonvolatile memory applications.

Area of Science:

  • Materials Science
  • Electrical Engineering
  • Nanoscience

Background:

  • Growing demand for flexible electronics like wearable devices and displays.
  • Flexible memory is crucial for data processing and communication in flexible systems.
  • Existing resistive switching memory faces cell-to-cell interference challenges.

Purpose of the Study:

  • To develop a flexible nonvolatile memory solution.
  • To address the cell-to-cell interference issue in flexible memory.
  • To enable high-performance flexible electronic systems.

Main Methods:

  • Development of a NOR-type flexible resistive random-access memory (RRAM).
  • Integration of a single crystal silicon transistor with a titanium oxide based memristor.

More Related Videos

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

A Method for Growing Bio-memristors from Slime Mold
07:46

A Method for Growing Bio-memristors from Slime Mold

Published on: November 2, 2017

Related Experiment Videos

Last Updated: May 28, 2026

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

A Method for Growing Bio-memristors from Slime Mold
07:46

A Method for Growing Bio-memristors from Slime Mold

Published on: November 2, 2017

  • Implementation of a one transistor-one memristor (1T-1M) structure.

    • Main Results:

    • Achieved random access to memory cells on flexible substrates.
    • Demonstrated elimination of electrical interference between adjacent memory cells.
    • Successfully integrated high-performance components onto a flexible platform.

    Conclusions:

    • The developed 1T-1M flexible RRAM offers a viable solution for high-performance nonvolatile memory.
    • This approach overcomes critical limitations for advanced flexible electronic applications.
    • Presents a novel pathway for next-generation flexible memory technologies.