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Updated: May 28, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Metal-supported high crystalline Bi₂Se₃ quintuple layers
Jeong Heum Jeon1, Won Jun Jang, Jong Keon Yoon
1Department of Physics, Korea University, 1-5 Anam-dong, Seongbuk-gu, 136-713, Seoul, Korea.
Abstract:
Atomically flat thin films of Bi(2)Se(3) were grown on Au(111) metal substrate using molecular beam epitaxy. Hexagonal atomic structures and quintuple layer steps were observed at the surfaces of grown films using scanning tunneling microscopy. Multiple sharp peaks from (003) family layers were characterized by x-ray diffraction measurements. The atomic stoichiometry of Bi and Se was considered using x-ray photoemission spectroscopy. Moiré patterns were obtained at the surfaces of one quintuple layer films due to lattice mismatch between Bi(2)Se(3) and Au. Our experiments suggest that Au is a reasonable material for electrodes in Bi(2)Se(3) devices.
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