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Updated: May 28, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
Published on: July 17, 2020
NaGe3P3: a new ternary germanium phosphide featuring an unusual [Ge3P7] ring
Kai Feng1, Wenlong Yin, Ran He
1Center for Crystal Research and Development, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, PR China.
Abstract:
A new ternary germanium phosphide, NaGe(3)P(3), was obtained for the first time with the use of NaP as the reactive flux. It crystallizes in the orthorhombic space group Pmc2(1). The basic structural unit is an unprecedented [Ge(3)P(7)] ring built from one Ge(P)(4) tetrahedron, one Ge(Ge)(P)(3) tetrahedron and one Ge(Ge)(P)(2) trigonal pyramid with Ge in mixed valences of 4+, 3+ and 1+. The bonding between a tetrahedrally coordinated Ge atom and a trigonal pyramidally coordinated Ge atom (with 4s(2) lone pair of electrons) is observed for the first time in inorganic compounds. These [Ge(3)P(7)] rings are connected with each other to form two-dimensional [Ge(3)P(3)](-) layers separated by Na(+) cations. An optical band gap of 2.06(2) eV was deduced from the diffuse reflectance spectrum. Based on the electronic structure calculation, NaGe(3)P(3) is an indirect gap semiconductor with the Ge 4s, Ge 4p and P 3p orbitals strongly hybridizing around the Fermi level.
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