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Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds
Published on: December 2, 2013
Doping of a dielectric layer as a new alternative for increasing sensitivity of the contactless conductivity
Renato Sousa Lima1, Thiago Pinotti Segato, Angelo Luiz Gobbi
1Instituto de Química de São Carlos, Universidade de São Paulo, São Carlos, Brazil.
Lab on a Chip
|November 3, 2011
Abstract:
This communication describes a new procedure to increase the sensitivity of C(4)D in PDMS/glass microchips. The method consists in doping the insulating layer (PDMS) over the electrodes with nanoparticles of TiO(2), increasing thus its dielectric constant. The experimental protocol is simple, inexpensive, and fast.
