High output nanogenerator based on assembly of GaN nanowires
Long Lin1, Chen-Ho Lai, Youfan Hu
1School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA.
Nanotechnology
|November 4, 2011
Abstract:
GaN nanowires (NWs) were synthesized through a vapor-liquid-solid (VLS) process. Based on structural analysis, the c-axis of the NW was confirmed to be perpendicular to the growth direction. Nanogenerators (NGs) fabricated by rational assembly of the GaN NWs produced an output voltage up to 1.2 V and output current density of 0.16 µA cm⁻². The measured performance of the GaN NGs was consistent with the calculations using finite element analysis (FEA).


