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Diode-less bilayer oxide (WO(x)-NbO(x)) device for cross-point resistive memory applications
Xinjun Liu1, Sharif Md Sadaf, Myungwoo Son
1School of Material Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea. tjuxjliu@yahoo.com
Nanotechnology
|November 8, 2011
Summary
Researchers developed a novel W-NbOx-Pt device combining threshold switching and resistive switching (RS) to prevent sneak currents in cross-point memory. This hybrid device simplifies fabrication for high-density memory integration.
Area of Science:
- Materials Science
- Electrical Engineering
- Solid-State Physics
Background:
- Resistive switching (RS) memory integration in cross-point arrays faces challenges with sneak currents.
- Hybrid devices combining threshold switching and RS elements offer a potential solution.
Purpose of the Study:
- To propose and investigate a hybrid device structure suppressing sneak currents for bipolar RS cells.
- To explore the feasibility of integrating threshold switching and memory switching functionalities into a single device.
- To provide a fabrication-advantageous structure for future high-density cross-point memory.
Main Methods:
- Device fabrication of electroformed W-NbOx-Pt stacks.
- Electrical characterization to assess threshold switching and bipolar resistive switching behaviors.
- Qualitative modeling to elucidate the switching mechanisms.
Main Results:
- Demonstrated simultaneous threshold switching and bipolar resistive switching in W-NbOx-Pt devices.
- Identified key parameter matching as crucial for hybrid device performance.
- Proposed a model where bulk metal-insulator transition causes threshold switching and interface redox drives RS.
Conclusions:
- A simple W-NbOx-Pt metal-oxide-metal structure effectively integrates threshold and memory switching.
- Functionally separated bulk and interface effects simplify fabrication for high-density memory.
- This approach offers a promising pathway for advanced cross-point memory architectures.
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