Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Characteristics of MOSFET01:17

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable quicker...
MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity arises...
MOSFET Amplifiers01:17

MOSFET Amplifiers

The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Large-Scale Integration of Experimental and Computational Data for 2D Materials.

ACS nano·2026
Same author

Engineered Strain in 2D Materials by Direct Growth on Deterministically Patterned Grayscale Topographies.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2026
Same author

Epitaxial growth of wafer-scale 2D superconductor single crystals by metal-organic chemical vapor deposition.

Nature communications·2025
Same author

Electrically tunable ultrafast dynamics and interactions of hybrid excitons in a 2D semiconductor bilayer.

Nature communications·2025
Same author

Widely-based full-genome analyses enable development of universal and strain-specific PCR toolkit for wheat dwarf virus detection, revealing new alternative hosts and challenging strain-host specificity.

Plant methods·2025
Same author

Enhancing interlayer exciton dynamics by coupling with monolithic cavities via the field-induced Stark effect.

Nature nanotechnology·2025

Related Experiment Video

Updated: May 27, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Integrated circuits and logic operations based on single-layer MoS2.

Branimir Radisavljevic1, Michael Brian Whitwick, Andras Kis

  • 1Electrical Engineering Institute, Ecole Polytechnique Fédérale de Lausanne, Lausanne, Switzerland.

ACS Nano
|November 15, 2011
PubMed
Summary
This summary is machine-generated.

Researchers developed the first integrated circuits using two-dimensional (2D) molybdenum disulfide (MoS2) semiconductors. These advanced nanoelectronic devices function as inverters and NOR logic gates, paving the way for smaller, more power-efficient electronics.

More Related Videos

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

Related Experiment Videos

Last Updated: May 27, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

Area of Science:

  • Nanoelectronics
  • Materials Science
  • Solid State Physics

Background:

  • Miniaturization of electronic circuits is approaching fundamental physical limits.
  • Two-dimensional (2D) materials, like single-layer molybdenum disulfide (MoS2), offer ultimate vertical scaling (sub-nanometer thickness).
  • 2D materials enable reduced short-channel effects in transistors, leading to smaller and more power-efficient devices.

Purpose of the Study:

  • To report the first integrated circuit fabricated using a 2D semiconductor, specifically MoS2.
  • To demonstrate the functionality of MoS2-based integrated circuits as inverters and logic gates.
  • To explore the potential of 2D materials for next-generation digital electronics.

Main Methods:

  • Fabrication of integrated circuits using single-layer MoS2 transistors.
  • Characterization of circuit performance, including voltage gain and logic operations.
  • Testing of inverter and NOR gate functionalities at room temperature.

Main Results:

  • Successfully demonstrated the first integrated circuit based on a 2D semiconductor (MoS2).
  • MoS2 integrated circuits operated as inverters with room-temperature voltage gain greater than 1.
  • Circuits composed of MoS2 transistors performed the NOR logic operation, a fundamental building block for digital logic.

Conclusions:

  • Single-layer MoS2 is a viable material for fabricating functional integrated circuits.
  • MoS2-based nanoelectronic devices are suitable for incorporation into digital circuits.
  • This work represents a significant step towards realizing ultra-small, low-power electronic devices using 2D materials.