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The origin of the pseudogap in α-Ga
Z Y Zhu1, Y C Cheng, U Schwingenschlögl
1Physical Sciences and Engineering Division, KAUST, Thuwal 23955-6900, Kingdom of Saudi Arabia.
Abstract:
Density functional theory, the free-electron empty lattice approximation and the nearly free-electron approximation are employed to investigate the electronic properties of partially covalent α-Ga. Whereas free-electron-like properties are revealed over a large energy range, a deep pseudogap at the Fermi level is characteristic of α-Ga. We explain the origin of the pseudogap in terms of a delicate interplay between the electronic states and the specific Brillouin zone geometry.
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