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Updated: May 27, 2026

Methods of Ex Situ and In Situ Investigations of Structural Transformations: The Case of Crystallization of Metallic Glasses
Published on: June 7, 2018
From mixed valence to the Kondo lattice regime
Pramod Kumar1, N S Vidhyadhiraja
1Theoretical Sciences Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bengaluru, India.
Abstract:
Many heavy fermion materials are known to cross over from the Kondo lattice regime to the mixed valence regime or vice versa as a function of pressure or doping. We study this crossover theoretically by employing the periodic Anderson model within the framework of the dynamical mean field theory. Changes occurring in the dynamics and transport across this crossover are highlighted. As the valence is decreased (increased) relative to the Kondo lattice regime, the Kondo resonance broadens significantly, while the lower (upper) Hubbard band moves closer to the Fermi level. The resistivity develops a two peak structure in the mixed valence regime: a low temperature coherence peak and a high temperature 'Hubbard band' peak. These two peaks merge, yielding a broad shallow maximum upon decreasing the valence further. The optical conductivity likewise exhibits an unusual absorption feature (shoulder) in the deep mid-infrared region, which grows in intensity with decreasing valence. The involvement of the Hubbard bands in dc transport and of the effective f-level in the optical conductivity are shown to be responsible for the anomalous transport properties. A two-band hybridization-gap model, which neglects incoherent effects due to many-body scattering, commonly employed to understand the optical response in these materials is shown to be inadequate, especially in the mixed valence regime. Comparison of theory with experiment carried out for (a) dc resistivities of CeRhIn(5), Ce(2)Ni(3)Si(5), CeFeGe(3) and YbIr(2)Si(2), (b) pressure dependent resistivity of YbInAu(2) and CeCu(6), and (c) optical conductivity measurements in YbIr(2)Si(2) yields excellent agreement.
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